Preparation and Performance of Gallium Nitride Powders with Preferred Orientation

Facile preparation of copper nitride powders and nanostructured films

The simple fluorinated precursor, copper(II) trifluoroacetate, Cu(CF3COO)2 can be effectively utilised in the synthesis of copper(I) nitride, Cu3N, powders and films by combinations of wet processing and gas–solid (ammonolysis) techniques. The resulting materials were characterized by powder X-ray diffraction (PXD), scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (E...

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

Ultralow wear of gallium nitride

Development of Gallium Nitride Substrates

Prominent progress has been made in nitride semiconductor since high bright blue LED has developed in 1993. It has also expanded to an industry after applied to white LED. These LEDs are produced by the epitaxial growth of nitride semiconductor layers on sapphire (a Al2O3) substrate. On the other hand, recording density in optical disks has increased from CD in 1980s to DVD in latter 1990s. Las...

Carrier Localization in Gallium Nitride

In wide bandgap GaN a large number of interesting and important scientific questions remain to be answered. For example, the large free electron concentration reaching 1019 to 1020 cm-3 in nominally undoped material are ascribed to intrinsic defects because no chemical impurity has been found at such high concentrations. According to theoretical models a nitrogen vacancy acts as a donor but its...